- 您现在的位置：买卖IC网 > Sheet目录415 > FDB8132 (Fairchild Semiconductor)MOSFET N-CH 30V 80A D2PAK
Typical Characteristics
5000
1000
100us
500
100
If R = 0
t AV = (L)(I AS )/(1.3*RATED BV DSS - V DD )
If R ≠ 0
t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS - V DD ) +1]
100
1ms
STARTING T J = 25 o C
10
1
OPERATION IN THIS
AREA MAY BE
10ms
DC
SINGLE PULSE
TJ = MAX RATED
10
STARTING T J = 150 o C
0.1
1
LIMITED BY rDS(on) TC = 25oC
10
V DS , DRAIN TO SOURCE VOLTAGE (V)
50
1
0.01
0.1
1 10 100
t AV , TIME IN AVALANCHE (ms)
1000
10000
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 5. Forward Bias Safe Operating Area
Figure 6. Unclamped Inductive Switching
Capability
160
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
160
PULSE DURATION = 80 μ s
120
80
V DD = 5V
T J = 175 o C
T J = 25 o C
120
80
DUTY CYCLE = 0.5% MAX
V GS = 20V
10V
8V
7V
6V
T J = -55 C
o
5V
4.5V
40
40
4V
0
2
3 4
5
0
0.0
0.5 1.0 1.5
2.0
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
10
8
I D = 80A
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
1.8
1.6
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
6
1.4
1.2
4
T J = 175 o C
1.0
2
0
2
T J = 25 o C
4 6 8
V GS , GATE TO SOURCE VOLTAGE ( V )
10
0.8
0.6
-80
I D = 80A
V GS = 10V
-40 0 40 80 120 160
T J , JUNCTION TEMPERATURE ( o C )
200
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
FDB8132_F085 Rev. C1
5
www.fairchildsemi.com
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
FDB8160
MOSFET N-CH 30V 80A D2PAK
FDB8441_F085
MOSFET N-CH 40V 80A D2PAK
FDB8442
MOSFET N-CH 40V 80A D2PAK
FDB8443
MOSFET N-CH 40V 120A TO-263AB
FDB8444
MOSFET N-CH 40V 70A TO-263AB
FDB8445
MOSFET N-CH 40V 70A D2PAK
FDB8447L
MOSFET N-CH 40V 15A D2PAK
FDB8453LZ
MOSFET N-CH 40V 16.1A TO-263AB
相关代理商/技术参数
FDB8132_F085
功能描述:MOSFET 30V N-CHAN PwrTrench
RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDB8160
功能描述:MOSFET N-CH 30V 80A D2PAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:PowerTrench® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
FDB8160_F085
功能描述:MOSFET 30V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDB8441
功能描述:MOSFET 40V N-Channel PowerTrench MOSFET
RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDB8441_10
制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 40V, 80A, 2.5m??
FDB8441_F085
功能描述:MOSFET 40V N-Ch PowerTrench
RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDB8442
功能描述:MOSFET 40V N-Ch PowerTrench MOSFET
RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDB8442_10
制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 40V, 80A, 2.9m??